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Invited Speakers


Alexandre Arnoult - LAAS-CNRS, Toulouse - A sensitive in-situ curvature measurement tool applied to dilute bismide growth

Oliver Bierwagen - PDI, Berlin - Comparison of the MBE growth of semiconducting oxides on graphene and SiC

Charles Cornet - INSA Rennes - A universal mechanism to describe III-V epitaxy on Si

Martin Eickhoff - Bremen University - Sn-induced growth of metastable epsilon-Ga2O3

Zarko Gacevic - ISOM, Madrid - Ga(In)N nanowires grown by MBE: nanotransistors and quantum light emitters

Detlev Grützmacher - FZ Jülich - MBE growth and in-situ patterning of topological insulators

Peter Krogstrup - University of Copenhagen - Selective area growth for future quantum electronics applications

Thomas Michely - University of Cologne - MBE of layered materials

Federico Panciera - C2N, University of Paris-Saclay - Real-time TEM observations of III-V nanowire growth

Henryk Turski - UNIPRESS, Warsaw - Nitrogen-rich groth mechanism for device quality N-polar nitride structures


Hausvogteiplatz 5–7
10117 Berlin, Germany

Tel: +49 (0) 30 20377 481
Fax: +49 (0) 30 20377 515